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| MITSUBISHI SEMICONDUCTOR THYRISTOR CR3EM LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR3EM OUTLINE DRAWING 1.00.5 Dimensions in mm TYPE NAME VOLTAGE CLASS 8 MAX 4 MAX 12 MIN 1.20.1 0.8 0.8 2.5 2.5 4.5 MAX 1.5 MIN 0.5 123 1.550.1 10 MAX 2 1 CATHODE 2 ANODE 3 GATE 1 * IT (AV) ........................................................................ 0.6A * VDRM ....................................................................... 400V * IGT ..........................................................................30mA APPLICATION Automatic strobe flasher 3 TO-202 MAXIMUM RATINGS Symbol VRRM VRSM VR (DC) VDRM VDSM Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage Voltage class 8 400 500 320 400 600 Unit V V V V V Symbol IT (RMS) IT (AV) ITSM I2t PGM PG (AV) VFGM VRGM IFGM Tj Tstg -- Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Conditions Commercial frequency, sine half wave, 180 conduction, Ta=43C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings 0.94 0.6 70 20 2.0 0.2 6 6 1 -40 ~ +125 -40 ~ +125 Unit A A A A2s W W V V A C C g Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Weight Typical value 1.1 Feb.1999 MITSUBISHI SEMICONDUCTOR THYRISTOR CR3EM LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IRRM IDRM VTM VGT VGD IGT IH Rth (j-a) Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Holding current Thermal resistance Test conditions Tj=125C, VRRM applied Tj=125C, VDRM applied Tc=25C, ITM=10A, instantaneous value Tj=25C, VD=6V, IT=0.5A Tj=125C, VD=1/2VDRM Tj=25C, VD=6V, IT=0.5A Tj=25C, VD=12V Junction to ambient Limits Min. -- -- -- -- 0.2 -- 25 -- Typ. -- -- -- -- -- -- 45 -- Max. 0.1 0.1 1.6 1.5 -- 30 -- 120 Unit mA mA V V V mA mA C/ W PERFORMANCE CURVES SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) MAXIMUM ON-STATE CHARACTERISTICS 102 7 Tc = 25C 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) RATED SURGE ON-STATE CURRENT 100 90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR THYRISTOR CR3EM LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE GATE CHARACTERISTICS 101 7 5 4 3 2 100 7 5 4 3 2 10-1 1 10 VFGM = 6V PGM = 2W GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 103 7 TYPICAL EXAMPLE 5 4 3 2 102 7 5 4 3 2 101 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) GATE VOLTAGE (V) VGD = 1.5V PG(AV) = 0.2W IGT = 30mA (Tj = 25C) 2 3 4 5 7 102 2 3 4 5 7 103 GATE CURRENT (mA) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 1.6 GATE TRIGGER CURRENT (Tj=tC) GATE TRIGGER CURRENT (Tj=25C) 100 (%) TRANSIENT THERMAL IMPEDANCE (C/W) 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 3 2 102 7 5 3 2 101 7 5 3 2 100 7 5 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 TIME (s) GATE TRIGGER VOLTAGE (V) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, DISTRIBUTION TYPICAL EXAMPLE 0 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) AVERAGE POWER DISSIPATION (W) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) 8 7 6 5 4 3 2 1 0 0 1.0 2.0 = 30 60 120 180 90 ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 AMBIENT TEMPERATURE (C) 140 120 100 80 360 RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION WITHOUT FIN 360 RESISTIVE, INDUCTIVE LOADS 5.0 3.0 4.0 60 = 30 60 40 90 120 20 180 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR THYRISTOR CR3EM LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE AVERAGE POWER DISSIPATION (W) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) 8 7 6 90 120 AMBIENT TEMPERATURE (C) 180 360 ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 WITHOUT FIN 140 120 100 80 360 RESISTIVE LOADS NATURAL CONVECTION RESISTIVE 5 60 LOADS = 30 4 3 2 1 0 0 1.0 2.0 3.0 4.0 5.0 60 = 30 60 40 90 120 20 180 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE HOLDING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 102 7 5 4 3 2 101 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) 100 (%) 100 (%) 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) TYPICAL EXAMPLE BREAKOVER VOLTAGE (Tj = tC) BREAKOVER VOLTAGE (Tj = 25C) HOLDING CURRENT VS. GATE TO CATHODE RESISTANCE 160 80 VD = 12V Ta = 25C HOLDING CURRENT (Tj = tC) HOLDING CURRENT (Tj = 25C) HOLDING CURRENT VS. GATE TRIGGER CURRENT HOLDING CURRENT (mA) 120 100 80 60 40 20 ,,,,,,,,,,,, ,,,,,,,,,,,, ,,,,,,,,,,,, ,,,,,,,,,,,, ,,,,,,,,,,,, ,,,,,,,,,,,, ,,,,,,,,,,,, HOLDING CURRENT (mA) 140 70 60 50 40 30 20 10 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 GATE TRIGGER CURRENT (mA) 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE TO CATHODE RESISTANCE (k) Feb.1999 MITSUBISHI SEMICONDUCTOR THYRISTOR CR3EM LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE 50 45 TURN-OFF TIME (s) 40 35 30 25 20 15 10 5 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 GATE TRIGGER CURRENT (mA) REPETITIVE PEAK REVERSE VOLTAGE (Tj=tC) REPETITIVE PEAK REVERSE VOLTAGE (Tj=25C) 100 (%) TURN-OFF TIME VS. GATE TRIGGER CURRENT REPETITIVE PEAK REVERSE VOLTAGE VS. JUNCTION TEMPERATURE 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 104 7 TYPICAL EXAMPLE 5 3 2 103 7 5 3 2 102 7 5 3 2 101 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 GATE CURRENT PULSE WIDTH (s) 100 (%) tw 0.1s GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) Feb.1999 |
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